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Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Nishikawa, S. (Autor:in) / Okada, R. (Autor:in) / Matsuura, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 271-274
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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