XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal: Fid-Bau Portal

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Lee, K.Y. / Huang, Y.H. / Huang, C.F. / Chung, C.Y. / Lin, S.C. / Zhao, F.

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XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Lee, K.Y. / Huang, Y.H. / Huang, C.F. / Chung, C.Y. / Lin, S.C. / Zhao, F.

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Lee, K.Y. / Huang, Y.H. / Huang, C.F. / Chung, C.Y. / Lin, S.C. / Zhao, F.

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Title:

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Contributors:

Lee, K.Y. (author) / Huang, Y.H. (author) / Huang, C.F. (author) / Chung, C.Y. (author) / Lin, S.C. (author) / Zhao, F. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 497-500

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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