Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal: Fid-Bau Portal

Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal

Lee, K. Y. / Chang, Y. H. / Huang, Y. H. / Huang, C. F. / Chung, C. Y. / Zhao, F.

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Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal

Lee, K. Y. / Chang, Y. H. / Huang, Y. H. / Huang, C. F. / Chung, C. Y. / Zhao, F.

Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal

Lee, K. Y. / Chang, Y. H. / Huang, Y. H. / Huang, C. F. / Chung, C. Y. / Zhao, F.

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Title:

Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal

Contributors:

Lee, K. Y. (author) / Chang, Y. H. (author) / Huang, Y. H. (author) / Huang, C. F. (author) / Chung, C. Y. (author) / Zhao, F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 266 ; 46-50

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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