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    Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth

    New search for: Ushio, S.
    New search for: Kutsuma, Y.
    New search for: Yoshii, A.
    New search for: Tamai, N.
    New search for: Ohtani, N.
    New search for: Kaneko, T.

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    Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth

    New search for: Ushio, S.
    New search for: Kutsuma, Y.
    New search for: Yoshii, A.
    New search for: Tamai, N.
    New search for: Ohtani, N.
    New search for: Kaneko, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth

    New search for: Ushio, S.
    New search for: Kutsuma, Y.
    New search for: Yoshii, A.
    New search for: Tamai, N.
    New search for: Ohtani, N.
    New search for: Kaneko, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth

    Contributors:

    Ushio, S. (author) / Kutsuma, Y. (author) / Yoshii, A. (author) / Tamai, N. (author) / Ohtani, N. (author) / Kaneko, T. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 717/720 ; 601-604

    Publication date:

    2012-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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