Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode: Fid-Bau Portal

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode

Sano, Y. / Aida, K. / Kato, T. / Yamamura, K. / Mimura, H. / Matsuyama, S. / Yamauchi, K.

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Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode

Sano, Y. / Aida, K. / Kato, T. / Yamamura, K. / Mimura, H. / Matsuyama, S. / Yamauchi, K.

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode

Sano, Y. / Aida, K. / Kato, T. / Yamamura, K. / Mimura, H. / Matsuyama, S. / Yamauchi, K.

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Document information

Title:

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode

Contributors:

Sano, Y. (author) / Aida, K. (author) / Kato, T. (author) / Yamamura, K. (author) / Mimura, H. (author) / Matsuyama, S. (author) / Yamauchi, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 865-868

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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