Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma: Fid-Bau Portal

Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Sano, Y. / Aida, K. / Nishikawa, H. / Yamamura, K. / Matsuyama, S. / Yamauchi, K.

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Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Sano, Y. / Aida, K. / Nishikawa, H. / Yamamura, K. / Matsuyama, S. / Yamauchi, K.

Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Sano, Y. / Aida, K. / Nishikawa, H. / Yamamura, K. / Matsuyama, S. / Yamauchi, K.

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Title:

Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Contributors:

Sano, Y. (author) / Aida, K. (author) / Nishikawa, H. (author) / Yamamura, K. (author) / Matsuyama, S. (author) / Yamauchi, K. (author)

Published in:

KEY ENGINEERING MATERIALS ; 516 ; 108-112

Publication date:

2012-01-01

Size:

5 pages

ISSN:

1013-9826

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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