Development of 1200 V, 3.7 m Omega -cm^2 4H-SiC DMOSFETs for Advanced Power Applications: Fid-Bau Portal

Development of 1200 V, 3.7 m Omega -cm^2 4H-SiC DMOSFETs for Advanced Power Applications

Ryu, S.H. / Cheng, L. / Dhar, S. / Capell, C. / Jonas, C. / Callanan, R. / O Loughlin, M.J. / Burk, A.A. / Lelis, A.J. / Scozzie, C.

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Development of 1200 V, 3.7 m Omega -cm^2 4H-SiC DMOSFETs for Advanced Power Applications

Ryu, S.H. / Cheng, L. / Dhar, S. / Capell, C. / Jonas, C. / Callanan, R. / O Loughlin, M.J. / Burk, A.A. / Lelis, A.J. / Scozzie, C.

Development of 1200 V, 3.7 m Omega -cm^2 4H-SiC DMOSFETs for Advanced Power Applications

Ryu, S.H. / Cheng, L. / Dhar, S. / Capell, C. / Jonas, C. / Callanan, R. / O Loughlin, M.J. / Burk, A.A. / Lelis, A.J. / Scozzie, C.

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Title:

Development of 1200 V, 3.7 m Omega -cm^2 4H-SiC DMOSFETs for Advanced Power Applications

Contributors:

Ryu, S.H. (author) / Cheng, L. (author) / Dhar, S. (author) / Capell, C. (author) / Jonas, C. (author) / Callanan, R. (author) / O Loughlin, M.J. (author) / Burk, A.A. (author) / Lelis, A.J. (author) / Scozzie, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1059-1064

Publication date:

2012-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Hull, B.A. / Jonas, C. / Ryu, S.H. et al. | British Library Online Contents | 2009

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