High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs: Fid-Bau Portal

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

Cheng, L. / Ryu, S.H. / Agarwal, A.K. / O Loughlin, M.J. / Burk, A.A. / Richmond, J. / Lelis, A. / Scozzie, C. / Palmour, J.

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High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

Cheng, L. / Ryu, S.H. / Agarwal, A.K. / O Loughlin, M.J. / Burk, A.A. / Richmond, J. / Lelis, A. / Scozzie, C. / Palmour, J.

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

Cheng, L. / Ryu, S.H. / Agarwal, A.K. / O Loughlin, M.J. / Burk, A.A. / Richmond, J. / Lelis, A. / Scozzie, C. / Palmour, J.

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Document information

Title:

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

Contributors:

Cheng, L. (author) / Ryu, S.H. (author) / Agarwal, A.K. (author) / O Loughlin, M.J. (author) / Burk, A.A. (author) / Richmond, J. (author) / Lelis, A. (author) / Scozzie, C. (author) / Palmour, J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1065-1068

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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