4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. et al. | British Library Online Contents | 2009

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors

Negoro, Y. / Horiuchi, A. / Iwanaga, K. et al. | British Library Online Contents | 2009

Identification of Deep Level Defects in SiC Bipolar Junction Transistors

Lenahan, P. M. / Pfeiffenberger, N. T. / Pribicko, T. G. et al. | British Library Online Contents | 2006

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors

Zhang, J. / Alexandrov, P. / Zhao, J. H. | British Library Online Contents | 2004

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Balachandran, S. / Chow, T. P. / Agarwal, A. K. | British Library Online Contents | 2006