4H-SiC Bipolar Junction Transistors with a Current Gain of 108: Fid-Bau Portal

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. / Capell, C. / Young, J. / Callanan, R. / Agarwal, A. / Palmour, J. / Geil, B. / Scozzie, C.J.

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4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. / Capell, C. / Young, J. / Callanan, R. / Agarwal, A. / Palmour, J. / Geil, B. / Scozzie, C.J.

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. / Capell, C. / Young, J. / Callanan, R. / Agarwal, A. / Palmour, J. / Geil, B. / Scozzie, C.J.

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Title:

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Contributors:

Zhang, J. (author) / Jonas, C. (author) / Burk, A.A. (author) / Capell, C. (author) / Young, J. (author) / Callanan, R. (author) / Agarwal, A. (author) / Palmour, J. (author) / Geil, B. (author) / Scozzie, C.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1159-1162

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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