Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor: Fid-Bau Portal

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Lin, L. / Zhao, J.H.

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Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Lin, L. / Zhao, J.H.

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Lin, L. / Zhao, J.H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Contributors:

Lin, L. (author) / Zhao, J.H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1163-1166

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Agarwal, A. K. / Ivanov, P. A. / Levinshtein, M. E. et al. | British Library Online Contents | 2001