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4H-SiC Gate Turn-Off (GTO) Thyristor Development

Casady, J. B. / Agarwal, A. K. / Rowland, L. B. / Siergiej, R. R. / Seshadri, S. / Mani, S. / Barrows, J. / Piccone, D. / Sanger, P. A. / Brandt, C. D.

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4H-SiC Gate Turn-Off (GTO) Thyristor Development

Casady, J. B. / Agarwal, A. K. / Rowland, L. B. / Siergiej, R. R. / Seshadri, S. / Mani, S. / Barrows, J. / Piccone, D. / Sanger, P. A. / Brandt, C. D.

4H-SiC Gate Turn-Off (GTO) Thyristor Development

Casady, J. B. / Agarwal, A. K. / Rowland, L. B. / Siergiej, R. R. / Seshadri, S. / Mani, S. / Barrows, J. / Piccone, D. / Sanger, P. A. / Brandt, C. D.

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Title:

4H-SiC Gate Turn-Off (GTO) Thyristor Development

Contributors:

Casady, J. B. (author) / Agarwal, A. K. (author) / Rowland, L. B. (author) / Siergiej, R. R. (author) / Seshadri, S. (author) / Mani, S. (author) / Barrows, J. (author) / Piccone, D. (author) / Sanger, P. A. (author) / Brandt, C. D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1069-1072

Publication date:

1998-01-01

Size:

4 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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