2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development: Fid-Bau Portal

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Agarwal, A. / Ryu, S.-H. / Singh, R. / Kordina, O. / Palmour, J. W.

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2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Agarwal, A. / Ryu, S.-H. / Singh, R. / Kordina, O. / Palmour, J. W.

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Agarwal, A. / Ryu, S.-H. / Singh, R. / Kordina, O. / Palmour, J. W.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Contributors:

Agarwal, A. (author) / Ryu, S.-H. (author) / Singh, R. (author) / Kordina, O. (author) / Palmour, J. W. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1387-1390

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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