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Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Hamada, S. / Yoshioka, H. / Kawami, H. / Nakamura, N. / Setoguchi, Y. / Matsunami, T. / Nishikawa, K. / Isshiki, T.

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Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Hamada, S. / Yoshioka, H. / Kawami, H. / Nakamura, N. / Setoguchi, Y. / Matsunami, T. / Nishikawa, K. / Isshiki, T.

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Hamada, S. / Yoshioka, H. / Kawami, H. / Nakamura, N. / Setoguchi, Y. / Matsunami, T. / Nishikawa, K. / Isshiki, T.

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Order at Subito €

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Document information

Title:

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Contributors:

Hamada, S. (author) / Yoshioka, H. (author) / Kawami, H. (author) / Nakamura, N. (author) / Setoguchi, Y. (author) / Matsunami, T. (author) / Nishikawa, K. (author) / Isshiki, T. (author) / Yamada-Kaneta, H. / Sakai, A.

Published in:

Defects-Recognition, Imaging and Physics in Semiconductors XIV ; 31-34

MATERIALS SCIENCE FORUM ; 725

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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