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    Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

    New search for: Ino, Y.
    New search for: Matsumoto, S.
    New search for: Nishimura, S.
    New search for: Terashima, K.
    New search for: Yamada-Kaneta, H.
    New search for: Sakai, A.

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    Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

    New search for: Ino, Y.
    New search for: Matsumoto, S.
    New search for: Nishimura, S.
    New search for: Terashima, K.
    New search for: Yamada-Kaneta, H.
    New search for: Sakai, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

    New search for: Ino, Y.
    New search for: Matsumoto, S.
    New search for: Nishimura, S.
    New search for: Terashima, K.
    New search for: Yamada-Kaneta, H.
    New search for: Sakai, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

    Contributors:

    Ino, Y. (author) / Matsumoto, S. (author) / Nishimura, S. (author) / Terashima, K. (author) / Yamada-Kaneta, H. / Sakai, A.

    Published in:

    Defects-Recognition, Imaging and Physics in Semiconductors XIV ; 285-288

    MATERIALS SCIENCE FORUM ; 725

    Publication date:

    2012-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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