Influence of hydrogen annealing on structure and optoelectronic properties in Al doped ZnO thin films: Fid-Bau Portal

Influence of hydrogen annealing on structure and optoelectronic properties in Al doped ZnO thin films

Ma, X.C. / Zhao, Y. / Zhu, D.L. / Lu, Y.M. / Cao, P.J. / Liu, W.J. / Han, S. / Jia, F.

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Influence of hydrogen annealing on structure and optoelectronic properties in Al doped ZnO thin films

Ma, X.C. / Zhao, Y. / Zhu, D.L. / Lu, Y.M. / Cao, P.J. / Liu, W.J. / Han, S. / Jia, F.

Influence of hydrogen annealing on structure and optoelectronic properties in Al doped ZnO thin films

Ma, X.C. / Zhao, Y. / Zhu, D.L. / Lu, Y.M. / Cao, P.J. / Liu, W.J. / Han, S. / Jia, F.

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Document information

Title:

Influence of hydrogen annealing on structure and optoelectronic properties in Al doped ZnO thin films

Contributors:

Ma, X.C. (author) / Zhao, Y. (author) / Zhu, D.L. (author) / Lu, Y.M. (author) / Cao, P.J. (author) / Liu, W.J. (author) / Han, S. (author) / Jia, F. (author)

Published in:

MATERIALS TECHNOLOGY ; 29 ; 101-104

Publication date:

2014-01-01

Size:

4 pages

ISSN:

1066-7857

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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