MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing: Fid-Bau Portal

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

Molina, J. / Ortega, R. / Calleja, W. / Rosales, P. / Zuniga, C. / Torres, A.

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MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

Molina, J. / Ortega, R. / Calleja, W. / Rosales, P. / Zuniga, C. / Torres, A.

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

Molina, J. / Ortega, R. / Calleja, W. / Rosales, P. / Zuniga, C. / Torres, A.

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Access via TIB

Check availability in my library

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Document information

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Document information

Title:

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

Contributors:

Molina, J. (author) / Ortega, R. (author) / Calleja, W. (author) / Rosales, P. (author) / Zuniga, C. (author) / Torres, A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 177 ; 1501-1508

Publication date:

2012-01-01

Size:

8 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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