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Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
Lee, J. S. (author) / Kim, Y. M. (author) / Kwon, J. H. (author) / Shin, H. (author) / Sohn, B. H. (author) / Lee, J. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 21 ; 178-183
2009-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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