Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing: Fid-Bau Portal

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

Jin, H. S. / Cho, Y. J. / Seok, T. J. / Kim, D. H. / Kim, D. W. / Lee, S. M. / Park, J. B. / Yun, D. J. / Kim, S. K. / Hwang, C. S.

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Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

Jin, H. S. / Cho, Y. J. / Seok, T. J. / Kim, D. H. / Kim, D. W. / Lee, S. M. / Park, J. B. / Yun, D. J. / Kim, S. K. / Hwang, C. S.

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

Jin, H. S. / Cho, Y. J. / Seok, T. J. / Kim, D. H. / Kim, D. W. / Lee, S. M. / Park, J. B. / Yun, D. J. / Kim, S. K. / Hwang, C. S.

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Title:

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

Contributors:

Jin, H. S. (author) / Cho, Y. J. (author) / Seok, T. J. (author) / Kim, D. H. (author) / Kim, D. W. (author) / Lee, S. M. (author) / Park, J. B. (author) / Yun, D. J. (author) / Kim, S. K. (author) / Hwang, C. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 357 ; 2306-2312

Publication date:

2015-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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