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    Erratum to “Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure” [Mater. Lett. (2012) 89–92]

    New search for: Park, S. J.
    New search for: Baik, S.
    New search for: Kim, H.

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    Erratum to “Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure” [Mater. Lett. (2012) 89–92]

    New search for: Park, S. J.
    New search for: Baik, S.
    New search for: Kim, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Erratum to “Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure” [Mater. Lett. (2012) 89–92]

    New search for: Park, S. J.
    New search for: Baik, S.
    New search for: Kim, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Erratum to “Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure” [Mater. Lett. (2012) 89–92]

    Contributors:

    Park, S. J. (author) / Baik, S. (author) / Kim, H. (author)

    Published in:

    MATERIALS LETTERS ; 89 ; 354-355

    Publication date:

    2012-01-01

    Size:

    2 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105 / 530

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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