A platform for research: civil engineering, architecture and urbanism
Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods
Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods
Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods
MATERIALS LETTERS ; 90 ; 76-78
2013-01-01
3 pages
Article (Journal)
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High temperature annealing of Er implanted GaN
British Library Online Contents | 2001
|High-temperature annealing behavior of ion-implanted spinel single crystals
British Library Online Contents | 2004
|Room Temperature Annealing Effects on Leakage Current of Ion Implanted p^+n 4H-SiC Diodes
British Library Online Contents | 2009
|Annealing behavior of luminescence from erbium-implanted GaN films
British Library Online Contents | 2001
|Defect annealing in ion implanted silicon carbide
British Library Online Contents | 1997
|