Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses: Fid-Bau Portal

Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

Yang, Q. / Cai, Z. / Wang, Y. / Huang, H. / Wu, Y.

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Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

Yang, Q. / Cai, Z. / Wang, Y. / Huang, H. / Wu, Y.

Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

Yang, Q. / Cai, Z. / Wang, Y. / Huang, H. / Wu, Y.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

Contributors:

Yang, Q. (author) / Cai, Z. (author) / Wang, Y. (author) / Huang, H. (author) / Wu, Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 193 ; 189-197

Publication date:

2015-01-01

Size:

9 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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