A platform for research: civil engineering, architecture and urbanism
Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor
Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor
Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor
KEY ENGINEERING MATERIALS ; 605 ; 491-494
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
British Library Online Contents | 2013
|Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
British Library Online Contents | 2009
|Characterization of AlGaN/GaN HEMT Devices Grown by MBE
British Library Online Contents | 2000
|