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Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
Sambonsuge, S. (author) / Saito, E. (author) / Jung, M.H. (author) / Fukidome, H. (author) / Filimonov, S. (author) / Suemitsu, M. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
2013-01-01
8 pages
Article (Journal)
English
DDC:
620.11
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