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Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane
Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane
Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane
Konno, A. (author) / Senthil, K. (author) / Murata, T. (author) / Suemitsu, M. (author)
APPLIED SURFACE SCIENCE ; 252 ; 3692-3696
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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