Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC: Fid-Bau Portal

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Kallinger, B. / Berwian, P. / Friedrich, J. / Rommel, M. / Azizi, M. / Hecht, C. / Friedrichs, P.

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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Kallinger, B. / Berwian, P. / Friedrich, J. / Rommel, M. / Azizi, M. / Hecht, C. / Friedrichs, P.

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Kallinger, B. / Berwian, P. / Friedrich, J. / Rommel, M. / Azizi, M. / Hecht, C. / Friedrichs, P.

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Title:

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Contributors:

Kallinger, B. (author) / Berwian, P. (author) / Friedrich, J. (author) / Rommel, M. (author) / Azizi, M. (author) / Hecht, C. (author) / Friedrichs, P. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 633-636

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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