Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC: Fid-Bau Portal

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Kallinger, B. / Berwian, P. / Friedrich, J. / Rommel, M. / Azizi, M. / Hecht, C. / Friedrichs, P.

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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Kallinger, B. / Berwian, P. / Friedrich, J. / Rommel, M. / Azizi, M. / Hecht, C. / Friedrichs, P.

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Kallinger, B. / Berwian, P. / Friedrich, J. / Rommel, M. / Azizi, M. / Hecht, C. / Friedrichs, P.

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Titel:

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

Beteiligte:

Kallinger, B. (Autor:in) / Berwian, P. (Autor:in) / Friedrich, J. (Autor:in) / Rommel, M. (Autor:in) / Azizi, M. (Autor:in) / Hecht, C. (Autor:in) / Friedrichs, P. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A.

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 633-636

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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