Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes: Fid-Bau Portal

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Ivanov, P.A. / Grekhov, I.V. / Potapov, A.S. / Il inskaya, N.D. / Kon kov, O.I. / Samsonova, T.P.

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Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Ivanov, P.A. / Grekhov, I.V. / Potapov, A.S. / Il inskaya, N.D. / Kon kov, O.I. / Samsonova, T.P.

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Ivanov, P.A. / Grekhov, I.V. / Potapov, A.S. / Il inskaya, N.D. / Kon kov, O.I. / Samsonova, T.P.

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Title:

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Contributors:

Ivanov, P.A. (author) / Grekhov, I.V. (author) / Potapov, A.S. (author) / Il inskaya, N.D. (author) / Kon kov, O.I. (author) / Samsonova, T.P. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 877-880

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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