A platform for research: civil engineering, architecture and urbanism
Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
Hasegawa, J. (author) / Konishi, K. (author) / Nakamura, Y. (author) / Ohtsuka, K. (author) / Nakata, S. (author) / Nakamine, Y. (author) / Nishimura, T. (author) / Hatano, M. (author) / Okumura, H. / Harima, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2007
|British Library Online Contents | 2009
|Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
British Library Online Contents | 2004
|Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
British Library Online Contents | 2013
|Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
British Library Online Contents | 1998
|