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Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures

Martin, L.C. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Thompson, R.F. / Smith, D.A. / Young, R.A.R. / Cormack, J.D. / Wright, N.G. / Horsfall, A.B.

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Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures

Martin, L.C. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Thompson, R.F. / Smith, D.A. / Young, R.A.R. / Cormack, J.D. / Wright, N.G. / Horsfall, A.B.

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures

Martin, L.C. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Thompson, R.F. / Smith, D.A. / Young, R.A.R. / Cormack, J.D. / Wright, N.G. / Horsfall, A.B.

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Document information

Title:

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures

Contributors:

Martin, L.C. (author) / Clark, D. (author) / Ramsay, E.P. (author) / Murphy, A.E. (author) / Thompson, R.F. (author) / Smith, D.A. (author) / Young, R.A.R. (author) / Cormack, J.D. (author) / Wright, N.G. (author) / Horsfall, A.B. (author)

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 891-894

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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