Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors: Fid-Bau Portal

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Martin, L.C. / Chan, H.K. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Smith, D.A. / Thompson, R.F. / Young, R.A.R. / Goss, J.P. / Wright, N.G.

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Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Martin, L.C. / Chan, H.K. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Smith, D.A. / Thompson, R.F. / Young, R.A.R. / Goss, J.P. / Wright, N.G.

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Martin, L.C. / Chan, H.K. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Smith, D.A. / Thompson, R.F. / Young, R.A.R. / Goss, J.P. / Wright, N.G.

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Document information

Title:

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Contributors:

Martin, L.C. (author) / Chan, H.K. (author) / Clark, D. (author) / Ramsay, E.P. (author) / Murphy, A.E. (author) / Smith, D.A. (author) / Thompson, R.F. (author) / Young, R.A.R. (author) / Goss, J.P. (author) / Wright, N.G. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 428-431

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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