Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing: Fid-Bau Portal

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Lawson, K. / Alvarez, G. / Bayne, S.B. / Veliadis, V. / Ha, H.C. / Urciuoli, D. / Scozzie, C.

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Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Lawson, K. / Alvarez, G. / Bayne, S.B. / Veliadis, V. / Ha, H.C. / Urciuoli, D. / Scozzie, C.

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Lawson, K. / Alvarez, G. / Bayne, S.B. / Veliadis, V. / Ha, H.C. / Urciuoli, D. / Scozzie, C.

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Title:

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Contributors:

Lawson, K. (author) / Alvarez, G. (author) / Bayne, S.B. (author) / Veliadis, V. (author) / Ha, H.C. (author) / Urciuoli, D. (author) / Scozzie, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 1021-1024

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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