Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

    New search for: Chevalier, F.
    New search for: Brosselard, P.
    New search for: Tournier, D.
    New search for: Grosset, G.
    New search for: Dupuy, L.
    New search for: Planson, D.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

    New search for: Chevalier, F.
    New search for: Brosselard, P.
    New search for: Tournier, D.
    New search for: Grosset, G.
    New search for: Dupuy, L.
    New search for: Planson, D.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

    New search for: Chevalier, F.
    New search for: Brosselard, P.
    New search for: Tournier, D.
    New search for: Grosset, G.
    New search for: Dupuy, L.
    New search for: Planson, D.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

    Contributors:

    Chevalier, F. (author) / Brosselard, P. (author) / Tournier, D. (author) / Grosset, G. (author) / Dupuy, L. (author) / Planson, D. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

    Published in:

    Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 938-941

    MATERIALS SCIENCE FORUM ; 740/742

    Publication date:

    2013-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET

    Rabkowski, J. / Peftitsis, D. / Bakowski, M. et al. | British Library Online Contents | 2013

    A 600V Deep-Implanted Gate Vertical JFET

    Mizukami, M. / Takikawa, O. / Murooka, M. et al. | British Library Online Contents | 2004

    Numerical simulation of implanted top-gate 6H-SiC JFET characteristics

    Lades, M. / Berz, D. / Schmid, U. et al. | British Library Online Contents | 1999

    Characterization of SiC JFET in Novel Packaging for 1 MHz Operation

    Okamura, K. / Ise, K. / Wake, M. et al. | British Library Online Contents | 2012

    Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET

    Mizukami, M. / Takikawa, O. / Imai, S. et al. | British Library Online Contents | 2005

    Back to top