Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

    New search for: Wienhausen, A.H.
    New search for: Kranzer, D.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

    New search for: Wienhausen, A.H.
    New search for: Kranzer, D.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

    New search for: Wienhausen, A.H.
    New search for: Kranzer, D.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

    Contributors:

    Wienhausen, A.H. (author) / Kranzer, D. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

    Published in:

    Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 1123-1128

    MATERIALS SCIENCE FORUM ; 740/742

    Publication date:

    2013-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Free Electrons and Resonant Donor State in Gallium Nitride

    Perlin, P. / Suski, T. / Teisseyre, H. et al. | British Library Online Contents | 1995

    Gallium Nitride Power Device Design Tradeoffs

    Matocha, K. / Chow, T. P. / Gutmann, R. J. | British Library Online Contents | 2002

    Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

    Mastro, M. A. / Caldwell, J. D. / Holm, R. T. et al. | British Library Online Contents | 2008

    Gallium nitride goes vertical

    Risbud, Aditi | British Library Online Contents | 2015

    Gallium nitride molded article, method for producing same, and gallium nitride sputtering target

    MESUDA MASAMI / MATSUMARU KEITARO / TAKAHASHI KOYATA et al. | European Patent Office | 2016

    Free access
    Back to top