A platform for research: civil engineering, architecture and urbanism
Thermal stability of InN epilayers grown by high pressure chemical vapor deposition
Thermal stability of InN epilayers grown by high pressure chemical vapor deposition
Thermal stability of InN epilayers grown by high pressure chemical vapor deposition
Acharya, A. R. (author) / Gamage, S. (author) / Senevirathna, M. K. (author) / Alevli, M. (author) / Bahadir, K. (author) / Melton, A. G. (author) / Ferguson, I. (author) / Dietz, N. (author) / Thoms, B. D. (author)
APPLIED SURFACE SCIENCE ; 268 ; 1-5
2013-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
British Library Online Contents | 2000
|Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
British Library Online Contents | 2013
|British Library Online Contents | 2009
|British Library Online Contents | 2006
|British Library Online Contents | 2006
|