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Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
Sun, G. S. (author) / Ning, J. (author) / Gong, Q. C. (author) / Gao, X. (author) / Wang, L. (author) / Liu, X. F. (author) / Zeng, Y. P. (author) / Li, J. M. (author) / Devaty, R. P. / Larkin, D. J.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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