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Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Ishida, Y. (author) / Takahashi, T. (author) / Okumura, H. (author) / Sekigawa, T. (author) / Yoshida, S. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1235-1238
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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