Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition: Fid-Bau Portal

Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Y. / Takahashi, T. / Okumura, H. / Sekigawa, T. / Yoshida, S.

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Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Y. / Takahashi, T. / Okumura, H. / Sekigawa, T. / Yoshida, S.

Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Y. / Takahashi, T. / Okumura, H. / Sekigawa, T. / Yoshida, S.

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Title:

Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Contributors:

Ishida, Y. (author) / Takahashi, T. (author) / Okumura, H. (author) / Sekigawa, T. (author) / Yoshida, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1235-1238

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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