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    Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

    New search for: Bousoulas, P.
    New search for: Giannopoulos, J.
    New search for: Giannakopoulos, K.
    New search for: Dimitrakis, P.
    New search for: Tsoukalas, D.

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    Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

    New search for: Bousoulas, P.
    New search for: Giannopoulos, J.
    New search for: Giannakopoulos, K.
    New search for: Dimitrakis, P.
    New search for: Tsoukalas, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

    New search for: Bousoulas, P.
    New search for: Giannopoulos, J.
    New search for: Giannakopoulos, K.
    New search for: Dimitrakis, P.
    New search for: Tsoukalas, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

    Contributors:

    Bousoulas, P. (author) / Giannopoulos, J. (author) / Giannakopoulos, K. (author) / Dimitrakis, P. (author) / Tsoukalas, D. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 332 ; 55-61

    Publication date:

    2015-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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