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Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Rosinski, M. / Gasior, P. / Fazio, E. / Ando, L. / Giuffrida, L. / Torrisi, L. / Parys, P. / Mezzasalma, A. M. / Wolowski, J.

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Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Rosinski, M. / Gasior, P. / Fazio, E. / Ando, L. / Giuffrida, L. / Torrisi, L. / Parys, P. / Mezzasalma, A. M. / Wolowski, J.

Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Rosinski, M. / Gasior, P. / Fazio, E. / Ando, L. / Giuffrida, L. / Torrisi, L. / Parys, P. / Mezzasalma, A. M. / Wolowski, J.

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Document information

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Document information

Title:

Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Contributors:

Rosinski, M. (author) / Gasior, P. (author) / Fazio, E. (author) / Ando, L. (author) / Giuffrida, L. (author) / Torrisi, L. (author) / Parys, P. (author) / Mezzasalma, A. M. (author) / Wolowski, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 272 ; 109-113

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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