Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications: Fid-Bau Portal

Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications

Wang, J. C. / Ye, Y. R. / Lai, C. S. / Lin, C. T. / Lu, H. C. / Wu, C. I. / Wang, P. S.

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Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications

Wang, J. C. / Ye, Y. R. / Lai, C. S. / Lin, C. T. / Lu, H. C. / Wu, C. I. / Wang, P. S.

Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications

Wang, J. C. / Ye, Y. R. / Lai, C. S. / Lin, C. T. / Lu, H. C. / Wu, C. I. / Wang, P. S.

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Document information

Title:

Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications

Contributors:

Wang, J. C. (author) / Ye, Y. R. (author) / Lai, C. S. (author) / Lin, C. T. (author) / Lu, H. C. (author) / Wu, C. I. (author) / Wang, P. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 276 ; 497-501

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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