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Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
Cho, S. I. (author) / Chang, K. (author) / Kwon, M. S. (author)
JOURNAL OF MATERIALS SCIENCE ; 43 ; 406-408
2008-01-01
3 pages
Article (Journal)
English
DDC:
620.11
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