Hetero-Epitaxial Defects and Optical Characteristics of SiCGe Layers Grown on 6H-SiC Substrate

Lin, T. / Lin, N. / Li, L.B. et al. | British Library Online Contents | 2011

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition

Anzalone, R. / Camarda, M. / Severino, A. et al. | British Library Online Contents | 2014

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method

Isshiki, T. / Nakamura, M. / Nishiguchi, T. et al. | British Library Online Contents | 2005

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Neudeck, P. G. / Powell, J. A. / Spry, D. J. et al. | British Library Online Contents | 2003

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers

Manolis, G. / Beshkova, M. / Syvajarvi, M. et al. | British Library Online Contents | 2011