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Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature

Ahn, K. J. / Lee, S. / Kim, W. J. / Yeom, G. Y. / Lee, W.

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Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature

Ahn, K. J. / Lee, S. / Kim, W. J. / Yeom, G. Y. / Lee, W.

Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature

Ahn, K. J. / Lee, S. / Kim, W. J. / Yeom, G. Y. / Lee, W.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature

Contributors:

Ahn, K. J. (author) / Lee, S. (author) / Kim, W. J. (author) / Yeom, G. Y. (author) / Lee, W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 1957-1963

Publication date:

2013-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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