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A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature
A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature
A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature
Mehrad, M. (author) / Orouji, A. A. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 1977-1981
2013-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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