Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon: Fid-Bau Portal

Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon

Turishchev, S.Yu. / Terekhov, V. A. / Parinova, E. V. / Korolik, O. V. / Mazanik, A. V. / Fedotov, A. K.

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Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon

Turishchev, S.Yu. / Terekhov, V. A. / Parinova, E. V. / Korolik, O. V. / Mazanik, A. V. / Fedotov, A. K.

Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon

Turishchev, S.Yu. / Terekhov, V. A. / Parinova, E. V. / Korolik, O. V. / Mazanik, A. V. / Fedotov, A. K.

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Title:

Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon

Contributors:

Turishchev, S.Yu. (author) / Terekhov, V. A. (author) / Parinova, E. V. (author) / Korolik, O. V. (author) / Mazanik, A. V. (author) / Fedotov, A. K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 1377-1381

Publication date:

2013-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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