Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature: Fid-Bau Portal

Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Li, S. n. / Ma, R. x. / Ma, C. h. / Xiao, Y. q. / Li, D. r. / He, L. w. / Zhu, H. m.

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Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Li, S. n. / Ma, R. x. / Ma, C. h. / Xiao, Y. q. / Li, D. r. / He, L. w. / Zhu, H. m.

Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Li, S. n. / Ma, R. x. / Ma, C. h. / Xiao, Y. q. / Li, D. r. / He, L. w. / Zhu, H. m.

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Title:

Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Contributors:

Li, S. n. (author) / Ma, R. x. (author) / Ma, C. h. (author) / Xiao, Y. q. (author) / Li, D. r. (author) / He, L. w. (author) / Zhu, H. m. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 17 ; 216-221

Publication date:

2014-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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