Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature: Fid-Bau Portal

Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Yang, C. H. / Lee, S. C. / Lin, T. C. / Zhuang, W. Y.

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Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Yang, C. H. / Lee, S. C. / Lin, T. C. / Zhuang, W. Y.

Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Yang, C. H. / Lee, S. C. / Lin, T. C. / Zhuang, W. Y.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Contributors:

Yang, C. H. (author) / Lee, S. C. (author) / Lin, T. C. (author) / Zhuang, W. Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 134 ; 68-75

Publication date:

2006-01-01

Size:

8 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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