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Simulation of temperature field during nanoscale orthogonal cutting of single-crystal silicon by molecular statics method

Lin, Z. C. / Lin, M. H. / Hsu, Y. C.

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Simulation of temperature field during nanoscale orthogonal cutting of single-crystal silicon by molecular statics method

Lin, Z. C. / Lin, M. H. / Hsu, Y. C.

Simulation of temperature field during nanoscale orthogonal cutting of single-crystal silicon by molecular statics method

Lin, Z. C. / Lin, M. H. / Hsu, Y. C.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Simulation of temperature field during nanoscale orthogonal cutting of single-crystal silicon by molecular statics method

Contributors:

Lin, Z. C. (author) / Lin, M. H. (author) / Hsu, Y. C. (author)

Published in:

COMPUTATIONAL MATERIALS SCIENCE ; 81 ; 58-67

Publication date:

2014-01-01

Size:

10 pages

ISSN:

0927-0256

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 510

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