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Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)
Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)
Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)
Yang, S. U. (author) / Jung, W. S. (author) / Lee, I. Y. (author) / Jung, H. W. (author) / Kim, G. H. (author) / Park, J. H. (author)
MATERIALS RESEARCH BULLETIN ; 50 ; 409-412
2014-01-01
4 pages
Article (Journal)
English
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