Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT: Fid-Bau Portal

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Miyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H.

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Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Miyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H.

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Miyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H.

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Title:

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Contributors:

Miyazawa, T. (author) / Ji, S.Y. (author) / Kojima, K. (author) / Ishida, Y. (author) / Nakayama, K. (author) / Tanaka, A. (author) / Asano, K. (author) / Tsuchida, H. (author) / Okumura, H. / Harima, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 135-138

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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